Epitaxially grown LiNbO3 thin films by polymeric precursor method

LiNbO3 thin films prepared through polymeric precursor method

Thin films of lithium niobate were deposited on (100) silicon by the polymeric precursor method (Pechini method). Annealing in static air was performed at 500 jC for 3 h. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The diele...

Influence of heat treatment on LiNbO3 thin films prepared on Si(111) by the polymeric precursor method

The effects of heat-treatment temperature on LiNbO3 thin films prepared by the polymeric precursor method were investigated. The precursor solution was deposited on Si(111) substrates by dip coating. X-ray diffraction and thermal analyses revealed that the crystallization process occurred at a low temperature (420 °C) and led to films with no preferential orientation. High-temperature treatment...

Spin-resolved photoemssion study of epitaxially grown MoSe2 and WSe2 thin films.

Few-layer thick MoSe2 and WSe2 possess non-trivial spin textures with sizable spin splitting due to the inversion symmetry breaking embedded in the crystal structure and strong spin-orbit coupling. We report a spin-resolved photoemission study of MoSe2 and WSe2 thin film samples epitaxially grown on a bilayer graphene substrate. We only found spin polarization in the single- and trilayer sample...

Photothermally modulated ferromagnetic resonance investigations of epitaxially grown thin Fe (001) films

The photothermally modulated (PM) ferromagnetic resonance (FMR) combines the high sensitivity of conventional FMR and the spatial resolution of thermal waves. For the first time, this alternative FMR-technique was applied to the magnetic characterization of high-quality thin Fe (001) films epitaxially grown on (001) GaAs substrate: Images of the distribution of crystalline anisotropy constant K...

Reversible change in electrical and optical properties in epitaxially grown Al-doped ZnO thin films